• DocumentCode
    3531662
  • Title

    Silicon based spin valve device

  • Author

    Kim, W.Y. ; Chang, Joonyeon ; Yi, Hyunjung ; Koo, H.C. ; Han, S.H. ; Lee, W.Y.

  • Author_Institution
    Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    625
  • Lastpage
    626
  • Abstract
    The spin injection and transport properties of the Permalloy/Si/Permalloy (Py) hybrid device fabricated on 50 nm thick silicon film on insulator (SOI) wafer were investigated in this study. Spin valve effect was found in the field range of 100∼200 Oe over which magnetization of two Py is aligned antiparallel showing maximum resistance. The result indicates that the spin polarized electrons are injected and are detected after transporting through Si channel on insulator.
  • Keywords
    Permalloy; elemental semiconductors; ferromagnetic materials; magnetisation; silicon; silicon-on-insulator; spin polarised transport; spin valves; Ni0.8Fe0.2-Si-Ni0.8Fe0.2; Permalloy; Permalloy/Si/Permalloy hybrid device; magnetization; resistance; silicon film on insulator wafer; spin injection; spin polarized electrons; spin valve device; transport properties; CMOS technology; Electrodes; Electrons; FETs; Insulation; Magnetic field measurement; Magnetoelectronics; Silicon; Spin polarized transport; Spin valves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1463741
  • Filename
    1463741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3531662