Title :
Silicon based spin valve device
Author :
Kim, W.Y. ; Chang, Joonyeon ; Yi, Hyunjung ; Koo, H.C. ; Han, S.H. ; Lee, W.Y.
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
The spin injection and transport properties of the Permalloy/Si/Permalloy (Py) hybrid device fabricated on 50 nm thick silicon film on insulator (SOI) wafer were investigated in this study. Spin valve effect was found in the field range of 100∼200 Oe over which magnetization of two Py is aligned antiparallel showing maximum resistance. The result indicates that the spin polarized electrons are injected and are detected after transporting through Si channel on insulator.
Keywords :
Permalloy; elemental semiconductors; ferromagnetic materials; magnetisation; silicon; silicon-on-insulator; spin polarised transport; spin valves; Ni0.8Fe0.2-Si-Ni0.8Fe0.2; Permalloy; Permalloy/Si/Permalloy hybrid device; magnetization; resistance; silicon film on insulator wafer; spin injection; spin polarized electrons; spin valve device; transport properties; CMOS technology; Electrodes; Electrons; FETs; Insulation; Magnetic field measurement; Magnetoelectronics; Silicon; Spin polarized transport; Spin valves;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463741
