High uniformity and high quality P-based heterostructures grown by a production MBE system for optoelectronics applications

The MBE growth of P-based heterostructures is presented. They have been characterized by means of HRXRD (high resolution X-ray diffraction) and room temperature photoluminescence (PL) measurements. All structures, including AlGaInP on GaAs and InAsP on InP, have been grown in an all solid-source multiwafer production MBE system, the RIBER MBE49. Measured quantum well wavelength uniformity indicates excellent thickness and compositional material uniformity. The wavelength variation is 5 Å over the entire platen for both AlGaInP/GaInP and InAsP/InP layers, demonstrating the uniformity of group III- and V-elements fluxes. PL intensity is very homogeneous over the whole substrate-holder, which further indicates a flat flux profile on the full platen for the As and P valved cracker cells. Because As and P incorporations are sensitive to the substrate temperature, we can also conclude that the growth temperature is uniform. Growths have been performed and optimized on different platen configurations.