Schottky gate control of photoluminescence from InGaAs quantum wells and ridge quantum wires

Author

Jiang, Chao ; Kasai, Seiya ; Hasegawa, Hideki

Author_Institution

Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

429

Lastpage

432

Abstract

Gate-control characteristics of photoluminescence (PL) were investigated for InGaAs quantum well (QW) and ridge quantum wire (QWR) structures grown by molecular beam epitaxy (MBE). Semi-transparent Au Schottky gates were formed on sample surfaces. Large modulations of PL intensity were seen for both QWR and QWs with different gate-voltage dependence. The results were explained in terms of electric field sweeping of photo-generated carriers.

Keywords

III-V semiconductors; Schottky barriers; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; semiconductor quantum wires; spectral line intensity; Au; InGaAs; InGaAs quantum wells; MBE; PL; PL intensity; Schottky gate control; electric field sweeping; gate-control characteristics; photo-generated carriers; photoluminescence; ridge quantum wires; semi-transparent Au Schottky gates; Automatic control; Excitons; Indium gallium arsenide; Molecular beam epitaxial growth; Nanostructures; Optical buffering; Optical control; Photoluminescence; Substrates; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205408

Filename

1205408