Title :
Schottky gate control of photoluminescence from InGaAs quantum wells and ridge quantum wires
Author :
Jiang, Chao ; Kasai, Seiya ; Hasegawa, Hideki
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
Gate-control characteristics of photoluminescence (PL) were investigated for InGaAs quantum well (QW) and ridge quantum wire (QWR) structures grown by molecular beam epitaxy (MBE). Semi-transparent Au Schottky gates were formed on sample surfaces. Large modulations of PL intensity were seen for both QWR and QWs with different gate-voltage dependence. The results were explained in terms of electric field sweeping of photo-generated carriers.
Keywords :
III-V semiconductors; Schottky barriers; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum wells; semiconductor quantum wires; spectral line intensity; Au; InGaAs; InGaAs quantum wells; MBE; PL; PL intensity; Schottky gate control; electric field sweeping; gate-control characteristics; photo-generated carriers; photoluminescence; ridge quantum wires; semi-transparent Au Schottky gates; Automatic control; Excitons; Indium gallium arsenide; Molecular beam epitaxial growth; Nanostructures; Optical buffering; Optical control; Photoluminescence; Substrates; Wires;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205408
