DocumentCode :
3531763
Title :
InAsN/GaAsN quantum dots grown on GaAs substrate by solid source MBE
Author :
Sun zhongzhe ; Yew Kuok Chuin
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
448
Lastpage :
451
Abstract :
InAsN/GaAsN quantum dots were grown on GaAs substrate by MBE. Structure and optical properties of single layer and multilayer dots were characterized and analyzed by photoluminescence and atomic force microscopy. High density InAsN dot (1.1×1011 cm-2) is achieved. Multilayer is found to increase the emission wavelength to 1120nm with the effect of electron state couple between dots in different layers.
Keywords :
III-V semiconductors; atomic force microscopy; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; 1120 nm; GaAs; InAsN-GaAsN; InAsN/GaAsN quantum dots; atomic force microscopy; electron state coupling; optical properties; photoluminescence; solid source MBE; structure; Atom optics; Atomic force microscopy; Atomic layer deposition; Gallium arsenide; Nonhomogeneous media; Optical microscopy; Photoluminescence; Quantum dots; Solids; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205413
Filename :
1205413
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3531763
بازگشت