Title :
Gate effect on Hall voltage in a InSb/FM device
Author :
Kim, W.Y. ; Chang, Joonyeon ; Han, S.H. ; Lee, W.Y.
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
A gate controlled Hall effect device was fabricated, in which a ferromagnetic element was deposited on top of insulated InSb Hall cross. It was shown that the magnetic fringe fields from a ferromagnet can effectively generate Hall voltage and create hysteresis in the Hall resistance. The Hall voltage was amplified by applying gate voltage. The increase was due to the reduction of carrier density induced by the gate confinement effect.
Keywords :
Hall effect devices; III-V semiconductors; Permalloy; carrier density; ferromagnetic materials; gold; indium compounds; magnetic hysteresis; Au-Ni80Fe20-InSb; Hall resistance; Hall voltage; carrier density; ferromagnetic element; gate confinement effect; gate controlled Hall effect device; magnetic fringe fields; Charge carrier density; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetization; Materials science and technology; Molecular beam epitaxial growth; Semiconductor films; Temperature sensors; Voltage;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463749
