DocumentCode :
3531793
Title :
1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Author :
Hsieh, T.-P. ; Yeh, N.T. ; Chiu, P.C. ; Huang, K.-F. ; Ho, W.-C. ; Wu, M.-C. ; Chyi, J.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
456
Lastpage :
459
Abstract :
In this paper, we demonstrated the long wavelength light emission from InAs quantum dots (QDs) directly capped with GaAs or covered with InGaAs strain reducing layer (SRL) grown by metalorganic chemical vapor deposition (MOCVD). These long wavelength QDs are grown by interrupted growth method with AsH3 as V group precursors. 1.3 μm light emission is observed as the QD directly capped with GaAs. By inserting 6 nm In0.25Ga0.75As, longer emission wavelength of 1.49 μm is observed for the InAs quantum dots.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; internal stresses; photoluminescence; semiconductor quantum dots; 1.3 to 1.5 micron; 6 nm; AsH3; InAs-GaAs; InAs/GaAs quantum dots; InGaAs; InGaAs strain reducing layer; MOCVD; interrupted growth method; long wavelength light emission; metalorganic chemical vapor deposition; photoluminescence; Capacitive sensors; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; Intrusion detection; MOCVD; Quantum dot lasers; Quantum dots; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205415
Filename :
1205415
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3531793
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