Title :
Reliable and damage-free dry grating etching for the InGaAsP DFB laser diodes
Author :
Kim, Hyeon Soo ; Lee, Eun-Hwa ; Rhee, Do Young ; Bang, Young Churl ; Yu, Joon Sang ; Lee, Jung Kee ; Choo, Ahn Goo ; Kim, Tae Il
Author_Institution :
Photonics Solution Lab., Samsung Electron. Co. Ltd., Suwon, South Korea
Abstract :
We developed dry etching for the fabrication of DFB lasers. Most of all, effects of dry etching conditions such as rf power and etch mask materials on the etching properties and overgrown active layers were investigated. Device characteristics and long-term stability of DFB laser fabricated by using a dry etched grating were also measured.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser stability; optical fabrication; quantum well lasers; sputter etching; InGaAsP; InGaAsP DFB laser diodes; MQW layers; device characteristics; etch mask materials; etching properties; fabrication; long-term stability; overgrown active layers; reliable damage-free dry grating etching; rf power; Diode lasers; Dry etching; Epitaxial layers; Gratings; Laser stability; Optical device fabrication; Optical materials; Resists; Surface emitting lasers; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205421
