Title :
Room temperature nonlinear transport in InGaAs/AlInAs based ballistic nanodevices
Author :
Mateos, J. ; Vasallo, B.G. ; Pardo, D. ; González, T. ; Boutry, H. ; Hackens, B. ; Bayot, V. ; Bednarz, L. ; Simon, P. ; Huynen, I. ; Galloo, J.S. ; Pichonat, E. ; Roelens, Y. ; Wallart, X. ; Bollaert, S. ; Cappy, A.
Author_Institution :
Dept. de Fisica Aplicada, Salamanca Univ., Spain
Abstract :
By using a semi-classical 2D Monte Carlo simulation, simple ballistic devices based on AlInAs/InGaAs channels are analyzed. Our simulations qualitatively reproduce the main features of the experimental results in T-branch and Y-branch junctions as well as in a ballistic rectifier appearing as a result of electron ballistic transport. We show that a quantum description of electron transport is not essential for the physical explanation of these results, since phase coherence plays no significant role. On the contrary, its origin can be purely classical: the presence of classical electron transport and space charge inside the structures.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; ballistic transport; gallium arsenide; high electron mobility transistors; indium compounds; nanoelectronics; semiconductor device models; space charge; AlInAs/InGaAs channels; InGaAs/AlInAs based ballistic nanodevices; T-branch junctions; Y-branch junctions; ballistic rectifier; classical electron transport; electron ballistic transport; phase coherence; quantum description; room temperature nonlinear transport; semi-classical 2D Monte Carlo simulation; simple ballistic devices; space charge; Ballistic transport; Electrons; Fabrication; HEMTs; Indium gallium arsenide; Monte Carlo methods; Rectifiers; Space charge; Submillimeter wave technology; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205422
