Title :
40 Gb/s transmission experiment using directly modulated 1.55 μm DBR lasers
Author :
Kjebon, O. ; Akram, Muhammad Nadeem ; Schatz, R.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
Directly modulated two section 1.55 μm InGaAsP DBR lasers were used for 40 Gb/s error free operation back-to-back and through 1 km of standard single mode fiber. Low drive voltage (2 Vpp) and low bias current (55-65) mA were used. The results show that directly modulated DBR lasers are potential candidates for low cost short distance links at 40 Gb/s.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; electro-optical modulation; gallium arsenide; indium compounds; optical fibre networks; optical transmitters; quantum well lasers; 1 km; 1.55 micron; 2 V; 40 Gb/s transmission experiment; 40 Gbit/s; 55 to 65 mA; InGaAsP; back-to-back; directly modulated 1.55 μm DBR lasers; error free operation; low bias current; low cost short distance links; low drive voltage; standard single mode fiber; two section 1.55 μm InGaAsP DBR lasers; Distributed Bragg reflectors; Erbium-doped fiber lasers; Fiber lasers; Laser beam cutting; Laser modes; Laser noise; Masers; Optical attenuators; Optical receivers; Optical sensors;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205424
