High wavelength selective p-i-n photodiodes using cost-effective one step growth technique of double filter layers for a 1.3/1.55 μm bi-directional transceiver

High wavelength selective 1.55 μm-photodiodes with double In_1-xGa_xAs_yP_1-y filter layers (DF-PD) have been developed using a novel epitaxial growth technique in which the front-side and the back-side filter layers were simultaneously grown on a InP substrate. Thick filter layers over 6 μm can be grown using this technique, which is needed in order to improve the wavelength selectivity. Thickness and carrier concentration of the filter layer were optimized under the theoretical consideration on carrier recombination process, which was induced by absorbed 1.3 μm noise light. High wavelength selectivity such as 27 dB has been obtained, which was a 5 dB improvement compared to the conventional DF-PD.