DocumentCode :
3531982
Title :
Device length dependency of cross gain modulation and gain recovery time in semiconductor optical amplifier
Author :
Yazaki, Tomonori ; Inohara, Ryo ; Tsurusawa, Munefumi ; Nishimura, Kosuke ; Usami, Masashi
Author_Institution :
KDDI R&D Labs. Inc., Saitama, Japan
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
510
Lastpage :
512
Abstract :
The cross gain modulation and its recovery time in the SOAs with the various lengths were experimentally investigated. It was found that these values strongly depended on the device length.
Keywords :
electro-optical modulation; optical repeaters; semiconductor optical amplifiers; InGaAsP; SOAs; cross gain modulation; device length dependency; gain recovery time; semiconductor optical amplifier; Lighting control; Optical filters; Optical pulses; Optical waveguides; Phase modulation; Probes; Repeaters; Semiconductor optical amplifiers; Time measurement; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
Type :
conf
DOI :
10.1109/ICIPRM.2003.1205428
Filename :
1205428
Link To Document :
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