Title :
Monolithically integrated balanced photodiode using asymmetric twin-waveguide technology
Author :
Agashe, S.S. ; Datta, S. ; Xia, F. ; Forrest, S.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We demonstrate a 14GHz regrowth-free monolithically integrated balanced photodiode balanced within 0.5dB, a minimum dark current of 5nA, a responsivity of 0.32A/W at 1.55μm wavelength, linearity up to 2mW input optical power.
Keywords :
dark conductivity; photodiodes; semiconductor device measurement; 1.55 micron; 14 GHz; 2 mW; 5 nA; InGaAsP-InP; asymmetric twin-waveguide technology; dark current; monolithically integrated balanced photodiode; responsivity; Dark current; Integrated optics; Optical fiber couplers; Optical fiber devices; Optical refraction; Optical variables control; Optical waveguides; P-i-n diodes; Photodiodes; Photonics;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205429
