Novel characterization technique for GaAs/GaInP heterojunction bipolar transistor wafers based on Fourier transformed photoreflectance enabling selective determination of interface electric fields

Author

Kita, Toshihiro ; Kakutani, T. ; Wada, O.

Author_Institution

Fac. of Eng., Kobe Univ., Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

531

Lastpage

533

Abstract

We have developed a new contactless characterization technique for GaAs/Ga_0.5In_0.5P heterojunction bipolar transistor (HBT) wafers using photoreflectance (PR) spectroscopy. The use of Fourier transformation (FT) of the PR spectrum succeeds in resolving the signals coming from the emitter-base and base-collector interfaces. The evaluated interface electric fields were compared with capacitance obtained from capacitance-voltage (C-V) measurements and interpreted by considering atomic ordering in the Ga_0.5In_0.5P emitter.

Keywords

Fourier transform spectra; III-V semiconductors; capacitance; gallium arsenide; heterojunction bipolar transistors; indium compounds; photoreflectance; Fourier transformed photoreflectance; Franz-Keldysh oscillation; Ga_0.5In_0.5P; Ga_0.5In_0.5P emitter; GaAs-GaInP; GaAs/GaInP heterojunction bipolar transistor wafers; atomic ordering; base-collector interface; capacitance; characterization technique; emitter-base interface; interface electric fields; Atomic measurements; Capacitance-voltage characteristics; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Light sources; Optical modulation; Optical reflection; Signal resolution; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205433

Filename

1205433