Modeling of Partially Depleted SOI DEMOSFETs with a Sub-circuit Utilizing the HiSIM-HV Compact Model

Author

Agarwal, Tarun Kumar ; Kumar, M. Jagadesh

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Delhi, New Delhi, India

fYear

2012

fDate

7-11 Jan. 2012

Firstpage

406

Lastpage

411

Abstract

This paper presents a sub-circuit model for partially depleted SOI drain extended MOSFETs (DEMOS) based on the HiSIM-HV model suitable for circuit simulator implementation. Our model accounts both for the high voltage and the floating body effects such as the quasi saturation effect, the impact ionization in the drift region and the famous kink effect. The model is validated for a set of channel and drift lengths to demonstrate the scalability of the model. The accuracy of the proposed sub-circuit model is verified using 2-D numerical simulations.

Keywords

MOSFET; circuit simulation; numerical analysis; silicon-on-insulator; 2D numerical simulations; HiSIM-HV compact model; circuit simulator implementation; floating body effects; high voltage effects; partial depleted SOI DEMOSFET model; quasi saturation effect; scalability; subcircuit model; Electric potential; Impact ionization; Integrated circuit modeling; Logic gates; MOSFETs; Numerical models; Semiconductor process modeling; Compact Modeling; HiSIM-HV; High Voltage MOSFET; Partially Depleted SOI; sub-circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design (VLSID), 2012 25th International Conference on

Conference_Location

Hyderabad

ISSN

1063-9667

Print_ISBN

978-1-4673-0438-2

Type

conf

DOI

10.1109/VLSID.2012.105

Filename

6167786