DocumentCode :
3532123
Title :
Wirebond Vs. flip chip design of high speed 3D stacked memory packages
Author :
Yazdani, Farhang
Author_Institution :
BroadPak Corp., Santa Clara, CA, USA
fYear :
2010
fDate :
3-4 Aug. 2010
Firstpage :
332
Lastpage :
336
Abstract :
3D Memory package-on-package stacking has gained popularity due to increase in demand for bandwidth, higher density and miniaturization. Challenges in design of high performance 3D stacks have increased with amplification in speed and signal integrity issues. This paper dissects the design elements of 3D memory stacks architecture and characterizes the signal integrity and trade off of wirebond and flip-chip stacks for high data rate applications. Signal integrity characterization of up to 10 stacked packages in both wirebond and flip chip configurations are presented. Effect of BGA stacking, transmission line and wirebond vs flip chip design in both time and frequency domains are analyzed and presented.
Keywords :
electronics packaging; flip-chip devices; lead bonding; BGA stacking; flip chip design; high speed 3D stacked memory packages; package-on-package stacking; signal integrity characterization; transmission line; wirebond; Bandwidth; Chip scale packaging; Dielectric constant; Dielectric losses; Flip chip; Frequency domain analysis; Signal design; Stacking; Transmission lines; Wires; 3D packaging; BGA; CSP; DDR3; PBGA; PCIE; POP; SIP; SSO; Ser-Des; System in Package; Xaui; cavity down; die; electromagnetic; eye diagram; flip chip; high speed; interconnect; jitter; memory module; memory stacking; modeling; package on package; package stacking; resonance; signal integrity; silicon; substrate; thermal; wirebond;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4244-7809-5
Type :
conf
DOI :
10.1109/ASQED.2010.5548315
Filename :
5548315
Link To Document :
بازگشت