On the feasibility of application of class E RF power amplifiers in UMTS

Author

Milosevic, Dusan ; van der Tang, Johan ; Van Roermund, Arthur

Author_Institution

Eindhoven Univ. of Technol., Netherlands

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

This paper investigates the feasibility of the application of class E RF power amplifiers in UMTS. A typical class E circuit has been designed and simulated, in conjunction with a linearization scheme based on the EER principle. The EER testbench uses ideal building blocks, since the emphasis is on the operation of the amplifier itself. Three different technologies have been used for the active device (Si BJT, GaAs HBT and CMOS) in order to examine the influence of the device technology on the PA performance. Relevant parameters have been monitored and put in the table form, for comparison of technologies. The simulation results indicate that class E PAs can successfully be used for power amplification of WCDMA RF signal and that GaAs technology is offering the highest efficiency.

Keywords

3G mobile communication; code division multiple access; linearisation techniques; power amplifiers; radiofrequency amplifiers; CMOS; EER linearization; GaAs; GaAs HBT; Si; Si BJT; UMTS; WCDMA signal; active device; class-E RF power amplifier; wireless communication; 3G mobile communication; CMOS technology; Circuit simulation; Circuit testing; Gallium arsenide; Heterojunction bipolar transistors; Operational amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205522

Filename

1205522