DocumentCode :
3532818
Title :
Tunnel magnetoresistance in II-VI/III-V heterostructure Ga1-xMnxAs/ZnSe/Ga1-xMnxAs magnetic tunnel junctions
Author :
Saito, H. ; Yuasa, S. ; Ando, K.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
769
Lastpage :
770
Abstract :
Films for magnetic tunnel junctions (MJT) were grown by molecular beam epitaxy (MBE) method using interconnected III-V and II-VI growth chambers without breaking ultrahigh vacuum. A very high tunnel magnetoresistance (TMR) effect in the fully epitaxial Ga1-xMnxAs/ZnSe/Ga1-xMnxAs MTJ is reported.
Keywords :
II-VI semiconductors; III-V semiconductors; gallium compounds; magnetic multilayers; magnetic thin films; molecular beam epitaxial growth; semiconductor heterojunctions; tunnelling magnetoresistance; zinc compounds; Ga1-xMnxAs-ZnSe-Ga1-xMnxAs; II-VI/III-V heterostructure; fully epitaxial magnetic tunnel junction; interconnected growth chambers; molecular beam epitaxy; tunnel magnetoresistance; Electrodes; III-V semiconductor materials; Magnetic films; Magnetic tunneling; Magnetization; Molecular beam epitaxial growth; SQUIDs; Superconducting films; Tunneling magnetoresistance; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1463813
Filename :
1463813
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3532818
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