Title :
Magnetization reversal with domain-wall pinning in (Ga,Mn)As wires
Author :
Koike, T. ; Hamaya, K. ; Funakoshi, N. ; Takemura, Y. ; Kitamoto, Y. ; Munekata, H.
Author_Institution :
Dept. of Innovative & Eng. Mater., Tokyo Inst. of Technol., Japan
Abstract :
The pinning effect of the domain wall in (Ga,Mn)As wires, with constriction by fabricating notches in the wires, is reported based on magnetoresistance (MR) hysteresis curves. The effect of oxidation on magnetization reversal process using local anodic oxidation atomic force microscopy (AFM) lithography was employed to reduce the width of the constriction into nanometer range.
Keywords :
III-V semiconductors; anodisation; atomic force microscopy; ferromagnetic materials; gallium arsenide; lithography; magnetic domain walls; magnetic hysteresis; magnetic semiconductors; magnetisation reversal; magnetoresistance; oxidation; GaMnAs; anodic oxidation; atomic force microscopy; constriction; domain wall; fabricating notches; hysteresis curves; lithography; magnetisation reversal; magnetoresistance; nanometer range; pinning; wires; Anisotropic magnetoresistance; Lithography; Magnetic anisotropy; Magnetic domains; Magnetic field measurement; Magnetic hysteresis; Magnetization reversal; Oxidation; Perpendicular magnetic anisotropy; Wires;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463815
