Title :
Ferromagnetism in dilute magnetic semiconductors and new materials for spintronics
Author :
Ivanov, V.A. ; Fleuro, V. ; Kikoin, K. ; Novotortsev, V.M. ; Aminov, T.G. ; Marenkin, S.F. ; Shabunina, G.G. ; Koroleva, L.I. ; Kalinnikov, V.T. ; Aronzon, B.A. ; Rylkov, V.V. ; Gudenko, S.V.
Author_Institution :
N. S. Kurkanov Inst. of Gen. & Inorg. Chem., Moscow, Russia
Abstract :
Mn-doped polycrystals and single crystals of CdGeAs2 have been synthesized by chemical technology and their semiconducting and magnetic properties were studied. Starting from around 3 mole% and above the Mn-ions begin to occupy the Ge4+ sites, the complexes Mn2+ +2p with weak bound holes p supply the hh in a valence band. This is confirmed by ESR, synchrotron measurements and X-ray analysis. Ferromagnetism was observed in samples at 3 and 6%Mn. In why-type samples, ferromagnetism is derived from the kinematic exchange between Mn2+ + p complexes, while in (CdGe,Mn)As2, ferromagnetism is governed by the kinematic exchange between Mn2+ + 2p complexes mainly on the Ge-sites via empty states near the top of the valence band.
Keywords :
X-ray analysis; cadmium compounds; exchange interactions (electron); ferromagnetic materials; impurity states; magnetoelectronics; paramagnetic resonance; semiconductor doping; semimagnetic semiconductors; ternary semiconductors; valence bands; CdGeAs2:Mn; ESR; Ge4+ sites; Mn-doped polycrystals; X-ray analysis; bound holes; chemical technology; dilute magnetic semiconductors; empty states; ferromagnetism; kinematic exchange; magnetic properties; semiconducting properties; spintronics; synchrotron measurements; valence band; Chemical technology; Crystalline materials; Crystals; Kinematics; Magnetic materials; Magnetic properties; Magnetic semiconductors; Magnetoelectronics; Semiconductivity; Semiconductor materials;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463817
