Title :
Simple noise formulas for MOS analog design
Author :
Arnaud, Alfredo ; Galup-Montoro, Carlos
Author_Institution :
Fac. de Ingenieria, Univ. de la Republica, Montevideo, Uruguay
Abstract :
The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (fc) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8μm technology.
Keywords :
MOSFET; flicker noise; semiconductor device models; semiconductor device noise; thermal noise; 0.8 micron; MOS transistor; bias point; corner frequency; flicker noise; low-noise analog circuit design; physical model; thermal noise; 1f noise; Circuit noise; Equations; Fluctuations; Frequency; Low-frequency noise; MOSFETs; Semiconductor device noise; Signal analysis; Transconductance;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1205532