• DocumentCode
    3532898
  • Title

    Simple noise formulas for MOS analog design

  • Author

    Arnaud, Alfredo ; Galup-Montoro, Carlos

  • Author_Institution
    Fac. de Ingenieria, Univ. de la Republica, Montevideo, Uruguay
  • Volume
    1
  • fYear
    2003
  • fDate
    25-28 May 2003
  • Abstract
    The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (fc) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8μm technology.
  • Keywords
    MOSFET; flicker noise; semiconductor device models; semiconductor device noise; thermal noise; 0.8 micron; MOS transistor; bias point; corner frequency; flicker noise; low-noise analog circuit design; physical model; thermal noise; 1f noise; Circuit noise; Equations; Fluctuations; Frequency; Low-frequency noise; MOSFETs; Semiconductor device noise; Signal analysis; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
  • Print_ISBN
    0-7803-7761-3
  • Type

    conf

  • DOI
    10.1109/ISCAS.2003.1205532
  • Filename
    1205532