Title :
Experimental evaluation of a 600 V super-junction planar PT IGBT prototype — Comparison with planar PT and trench gate PT technologies
Author :
Selgi, Lorenzo M. ; Fragapane, Leonardo
Author_Institution :
STMicroelectron., Catania, Italy
Abstract :
We report, for the first time, an experimental electrical characterization of a super-junction PT IGBT feasibility study on applying the charge compensation device concept to a planar punch-through IGBT. We also performed a comparison both with a planar PT IGBT and a trench gate PT IGBT.
Keywords :
insulated gate bipolar transistors; charge compensation device concept; planar punch-through IGBT; super-junction planar PT IGBT prototype; trench gate PT technology; voltage 600 V; Conductivity; Doping; Electric breakdown; Electric fields; Insulated gate bipolar transistors; Junctions; Logic gates; Bipolar device; Charge compensation device; Device characterization; IGBT; Super junction devices;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6631745
