DocumentCode :
3533415
Title :
Serial resistance effect on p-type and n-type silicon concentrated solar cells
Author :
Pasquinelli, Marcel ; Barakel, Damien
Author_Institution :
UPCAM Fac. des Sci. et Tech., Aix - Marseille Univ., Marseille, France
fYear :
2011
fDate :
14-16 June 2011
Firstpage :
161
Lastpage :
163
Abstract :
Today´s photovoltaic (PV) industry is growing up at a rapid rate, but it could be faster by reducing costs for both the final products and the capital investment required for scale-up. In this work, we have studied the possibility to use conventional silicon solar cell for low concentrated applications (X10-X100). The first result is that p type bulk silicon, as it was used in conventional solar cells technology, gives best results than n type only for the Jsc parameter. For concentration factors in the range X = 10 to 20, higher efficiencies (η = 16%) are obtained with the two type of solar cells.
Keywords :
investment; photovoltaic power systems; solar cells; Jsc parameter; capital investment; concentration factor; n-type silicon concentrated solar cell; p type bulk silicon; p-type silicon concentrated solar cell; photovoltaic industry; serial resistance effect; Equations; Mathematical model; Photovoltaic cells; Photovoltaic systems; Resistance; Silicon; Circuits; Energy; Solar system;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Clean Electrical Power (ICCEP), 2011 International Conference on
Conference_Location :
Ischia
Print_ISBN :
978-1-4244-8929-9
Electronic_ISBN :
978-1-4244-8928-2
Type :
conf
DOI :
10.1109/ICCEP.2011.6036370
Filename :
6036370
Link To Document :
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