Title :
Broad-band transimpedance amplifier for multigigabit-per-second (40 Gbps) optical communication systems in 0.135 μm PHEMT technology
Author :
Madureira, Miguel A M ; Monteiro, Paulo M P ; Aguiar, Rui L. ; Violas, Manuel ; Gloanec, Maurice ; Leclerc, Eric ; Lefebvre, Benoit
Author_Institution :
Instituto de Telecomunicacoes, Aveiro Univ., Portugal
Abstract :
This paper presents the design and characterization of a high-bandwidth transimpedance GaAs MMIC suitable for the 40 Gbps data transmission rate. The circuit was implemented on a well established MMIC PH15 process from United Monolithic Semiconductors (UMS) offering good yield, high performance and low cost per chip. The circuit presents a 49dBΩ gain, a low noise figure and wide bandwidth for input capacities in excess of 100 fF. An analysis considering noise, stability and the influence of bondwire inductance on the overall circuit behaviour was performed. Input capacitance tolerance and output impedance matching conditions were also evaluated. On-wafer characterisation results are also presented and confronted with simulation data showing good agreement with simulated results.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; optical communication equipment; wideband amplifiers; 0.135 micron; 100 fF; 40 Gbit/s; GaAs; GaAs MMIC; PHEMT technology; bondwire inductance; broadband transimpedance amplifier; gain; input capacitance tolerance; noise figure; optical communication system; output impedance matching; stability; Circuit simulation; Costs; Data communication; Gallium arsenide; MMICs; Noise figure; Optical amplifiers; Optical fiber communication; PHEMTs; Semiconductor optical amplifiers;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1205587
