A 22-mW 435 MHz silicon on insulator CMOS high-gain LNA for subsampling receivers

A low-power, high-gain Silicon on Insulator (SOI) CMOS low noise amplifier (LNA) for use as the first stage of a subsampling receiver for space application at UHF frequency is proposed for the first time. The simulated results of +80 dB available gain and 2.1-dB noise figure (NF) with very low power consumption is reported and makes it suitable for subsampling mixer with Track and Hold (T/H) circuit. The LNA contains both tuned and inductorless amplifier stages. The first stage utilizes resonant tank with on-chip capacitors and improved-Q spiral inductors. The following stage is composed of five inductorless amplifiers designed to achieve the high-gain. Both stages apply fully differential architecture with cascoded transistors to achieve high-gain, low-power at high frequencies with reasonable reverse isolation. This is the first high-gain LNA design using SOI CMOS technology.