DocumentCode
3533705
Title
Growth of perpendicular FePt thin films at low temperature
Author
Lai, Chih-Huang ; Wu, Y. Yun-Chung ; Chiang, Chao-Chien
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2005
fDate
4-8 April 2005
Firstpage
869
Lastpage
870
Abstract
In this study, the non-epitaxial FePt thin films with [001] preferred orientation have been prepared by using magnetron sputtering. A Cr65Mo15Mn20 underlayer was used to induce strain energy, and Fe and Pt intermediate layers were used to adjust the orientation of FePt. By depositing films at 250°C and post-annealing at 300°C in the forming gas, a high perpendicular coercivity about 6800 Oe can be obtained.
Keywords
annealing; chromium alloys; coercive force; ferromagnetic materials; iron alloys; magnetic thin films; manganese alloys; metallic thin films; molybdenum alloys; platinum alloys; sputter deposition; 250 degC; 300 degC; Cr65Mo15Mn20; FePt; forming gas; magnetron sputtering; nonepitaxial thin films; perpendicular coercivity; postannealing; preferred orientation; strain energy; Annealing; Capacitive sensors; Chaos; Coercive force; Lattices; Sputtering; Temperature; Tensile stress; Transistors; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN
0-7803-9009-1
Type
conf
DOI
10.1109/INTMAG.2005.1463863
Filename
1463863
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