Lumped element based Doherty power amplifier topology in CMOS process

Author

Tongchoi, C. ; Chongcheawchamnan, M. ; Worapishet, A.

Author_Institution

Microelectron. Res. Center, Mahanakorn Univ. of Technol., Bangkok, Thailand

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

A CMOS microwave Doherty power amplifier, which maintains high power-added efficiency (PAE) over a wide range of output power, is developed. The implementation is based on a combination of class AB and class C CMOS power amplifiers where the quarter-wave transformers are realized using lumped-element LC equivalents for high efficiency and compact design. Also outlined are practical design guideline and considerations. Validation of the implementation approach is given through the simulated Doherty amplifier in 0.25 μm CMOS process featuring 200 mW power, 10 dB power gain and more than 40% PAE up to 5.5-dB backed off from the maximum output power at a 3V supply voltage.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; UHF power amplifiers; equivalent circuits; field effect MMIC; integrated circuit design; 0.25 micron; 10 dB; 200 mW; 3 V; CMOS process; Doherty power amplifier topology; PAE; class AB power amplifiers; class C power amplifiers; design guideline; lumped element LC equivalents; microwave power amplifier; output power; power-added efficiency; quarter-wave transformers; CMOS process; Gain; Guidelines; High power amplifiers; Microwave amplifiers; Power amplifiers; Power generation; Topology; Transformers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205596

Filename

1205596