Class-E CMOS power amplifiers for RF applications

Author

Hung, Tang Tat ; El-Gamal, Mourad N.

Author_Institution

Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

CMOS radio frequency class-E power amplifiers (PA) for GMSK/GFSK modulations have been designed and fabricated using 0.25/0.35μm technologies. The operating frequencies are centred at 1.2GHz and 2.65GHz with 24-26dBm output power. Mode locking techniques are employed for both designs, in order to reduce the driving requirement. High efficiency broadband off-chip hybrid ring baluns are used at both input and output for converting signals from single-ended to differential and vice versa. Regular bonding wires are used as inductors for the 1.2GHz PA, and on-chip bondwires are used for the 2.65GHz PA. With a 1.3V supply, the measured power added efficiency (PAE) of the 1.2GHz PA, after taking into account the losses in the baluns, is 62%. The PAE for the 2.65GHz PA is 38% when operated from a 1.7V power supply.

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; baluns; frequency shift keying; minimum shift keying; 0.25 micron; 0.35 micron; 1.2 GHz; 1.3 V; 1.7 V; 2.65 GHz; 38 percent; 62 percent; CMOS power amplifiers; GMSK/GFSK modulations; RF applications; bonding wires; broadband off-chip hybrid ring baluns; class-E power amplifiers; driving requirement; mode locking techniques; on-chip bondwires; operating frequencies; power added efficiency; Bonding; Broadband amplifiers; CMOS technology; Impedance matching; Laser mode locking; Power amplifiers; Power generation; Power supplies; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205597

Filename

1205597