DocumentCode :
3533902
Title :
X-ray reflectivity measurement of a iridium coated MEMS optic with atomic layer deposition
Author :
Ogawa, Tomohiro ; Ezoe, Yuichiro ; Mitsuishi, Ikuyuki ; Kakiuchi, Takuya ; Moriyama, Teppei ; Ohashi, Takaya ; Mitsuda, Kazuhisa ; Putkonen, Matti
Author_Institution :
Dept. of Phys., Tokyo Metropolitan Univ., Hachioji, Japan
fYear :
2012
fDate :
6-9 Aug. 2012
Firstpage :
83
Lastpage :
84
Abstract :
We coated a MEMS-based silicon optic with iridium by means of atomic layer deposition. Its X-ray reflectivity is quantitatively measured using a parallel X-ray beam at Al Kα 1.49 keV.
Keywords :
X-ray apparatus; X-ray optics; atomic layer deposition; elemental semiconductors; iridium; micro-optics; micromechanical devices; optical variables measurement; silicon; Ir; MEMS-based silicon optic; Si; X-ray reflectivity measurement; atomic layer deposition; electron volt energy 1.49 keV; iridium coated MEMS optic; parallel X-ray beam; Atom optics; Extraterrestrial measurements; Optical films; Optical scattering; Optical variables control; Optical variables measurement; Silicon; ALD; DRIE; X-ray optics; annealing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical MEMS and Nanophotonics (OMN), 2012 International Conference on
Conference_Location :
Banff, AB
ISSN :
2160-5033
Print_ISBN :
978-1-4577-1511-2
Type :
conf
DOI :
10.1109/OMEMS.2012.6318813
Filename :
6318813
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3533902
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