Title :
Features of wafer — Mo joining by sintering of silver paste for large area silicon devices
Author :
Chernikov, A.A. ; Stavtsev, A.V. ; Surma, A.M.
Author_Institution :
PROTON-ELECTROTEX, Orel, Russia
Abstract :
Conjunction of silicon crystals with surface over 10 cm2 with molybdenum discs by means of silver paste sintering is being discussed. It is shown that to ensure strength of joint and low thermomechanical stress selection of dependencies of pressure and temperature on time is very important. It is necessary to ensure thermal stability of multilayer metal process on jointed surfaces. Experimental elements are characterized by reduced thermal resistance and high cycle stability.
Keywords :
joining processes; molybdenum; power semiconductor devices; semiconductor device reliability; silicon; silver; sintering; thermal resistance; thermal stability; thermomechanical treatment; wafer level packaging; Mo; Si; high cycle stability; joint strength; large area silicon devices; low thermomechanical stress selection; molybdenum discs; multilayer metal process; silicon crystals; silver paste sintering; thermal resistance; thermal stability; Crystals; Heating; Joints; Silicon; Silver; Stress; Surface treatment; High power discrete device; Packaging; Power cycling; Reliability;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6631822
