Title :
Comparison of RB-IGBT and normal IGBT in T-type three-level inverter
Author :
Li Zhang ; Kai Sun ; Lipei Huang ; Igarashi, Seiki
Author_Institution :
State Key Lab. of Power Syst., Tsinghua Univ., Beijing, China
Abstract :
A T-type three-level inverter topology with RB-IGBT is researched. The operation modes and modulation strategy is analyzed. The power loss of T-type inverter with RB-IGBT and normal IGBT is calculated and compared. Experimental results show that T-type inverter with RB-IGBT has better efficiency than that of normal IGBT.
Keywords :
insulated gate bipolar transistors; invertors; power semiconductor switches; RB-IGBT; T-type three-level inverter; modulation strategy; normal IGBT; operation mode; power loss; Inductors; Insulated gate bipolar transistors; Inverters; Leakage currents; Modulation; Switching frequency; Topology; Efficiency; Inverter; RB-IGBT; Three-level; Transformerless;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6631823
