DocumentCode
3534237
Title
Control of high power IGBT modules in the active region for fast pulsed power converters
Author
Cravero, Jean-Marc ; Cabaleiro Magallanes, Francisco ; Garcia Retegui, Rogelio ; Maestri, Sebastian ; Uicich, Gustavo
Author_Institution
TE-EPC Group, Eur. Organ. for Nucl. Res. (C.E.R.N.), Geneva, Switzerland
fYear
2013
fDate
2-6 Sept. 2013
Firstpage
1
Lastpage
8
Abstract
At CERN, fast pulsed power converters are used to supply trapezoidal current in different magnet loads. These converters perform output current regulation by using a high power IGBT module in its ohmic region. This paper presents a new strategy for pulsed current control applications using a specifically designed IGBT driver.
Keywords
driver circuits; electric current control; insulated gate bipolar transistors; power control; power convertors; power field effect transistors; pulsed power technology; CERN; current regulation; fast pulsed power converter; high power IGBT driver module; magnet load; ohmic region; pulsed current control application; trapezoidal current supply; Current control; Current measurement; Insulated gate bipolar transistors; Integrated circuits; Saturation magnetization; Topology; Voltage control; Current control; IGBT; Particle accelerator; Pulsed power supply;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6631830
Filename
6631830
Link To Document