Photoluminescence of InGaAs islands on Si (111) substrate grown using micro-channel selective-area MOVPE

Author

Fujimoto, Y. ; Higo, A. ; Kjellman, J.O. ; Watanabe, S. ; Sugiyama, M. ; Nakano, Y.

Author_Institution

Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan

fYear

2012

fDate

6-9 Aug. 2012

Firstpage

200

Lastpage

201

Abstract

III-V hetero-integration on silicon is most attractive for lasers, SOAs, and detectors for silicon photonics. InGaAs disks on Si substrate have been grown using micro-channel selective-area metal-organic vapor phase epitaxy. We have measured the luminescent spectra by using the micro-photoluminescence systems and obtained broadband spectra in 1.3-2.1 μm range, suitable for the telecom and the data-communication wavelength.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V heterointegration; InGaAs; InGaAs disks; InGaAs islands; Si; Si (111) substrate; broadband spectra; data-communication wavelength; luminescent spectra; microchannel selective-area MOVPE; microphotoluminescence; telecom wavelength; Epitaxial growth; Epitaxial layers; Gallium; Indium gallium arsenide; Lenses; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMS and Nanophotonics (OMN), 2012 International Conference on

Conference_Location

Banff, AB

ISSN

2160-5033

Print_ISBN

978-1-4577-1511-2

Type

conf

DOI

10.1109/OMEMS.2012.6318872

Filename

6318872