Title :
Analysis of 7T SRAM cell with SNM 0n 45nm technology for increasing cell stability
Author :
Singh, Madhav ; Tomar, Shelendra Singh
Author_Institution :
ITM Univ., Gwalior, India
Abstract :
This paper introduces how SRAM cell stability changes with static noise margin during various operations while taking different parameters. The SNM changes various parameters of SRAM cell SNM varies during each cell operation. The cell ratio, pull up ratio is also play vital role in SRAM cell stability. We have analysis how SNM varies with the threshold voltage and supply voltage. We have taken various pulses on cadence tool of 7T SRAM cell. We have done work on 45nm technology on cadence tool.
Keywords :
SRAM chips; 7TSRAM cell stability; SNM; cadence tool; cell stability; size 45 nm; Irrigation; MOS devices; Random access memory; Stability analysis; Transient response; Transistors; CMOS; Data Stability; Read margin; Static Noise Margin; Write margin;
Conference_Titel :
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-0071-1
DOI :
10.1109/ICONSET.2011.6167983
