DocumentCode
3534829
Title
Analysis of 7T SRAM cell with SNM 0n 45nm technology for increasing cell stability
Author
Singh, Madhav ; Tomar, Shelendra Singh
Author_Institution
ITM Univ., Gwalior, India
fYear
2011
fDate
28-30 Nov. 2011
Firstpage
370
Lastpage
372
Abstract
This paper introduces how SRAM cell stability changes with static noise margin during various operations while taking different parameters. The SNM changes various parameters of SRAM cell SNM varies during each cell operation. The cell ratio, pull up ratio is also play vital role in SRAM cell stability. We have analysis how SNM varies with the threshold voltage and supply voltage. We have taken various pulses on cadence tool of 7T SRAM cell. We have done work on 45nm technology on cadence tool.
Keywords
SRAM chips; 7TSRAM cell stability; SNM; cadence tool; cell stability; size 45 nm; Irrigation; MOS devices; Random access memory; Stability analysis; Transient response; Transistors; CMOS; Data Stability; Read margin; Static Noise Margin; Write margin;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location
Chennai
Print_ISBN
978-1-4673-0071-1
Type
conf
DOI
10.1109/ICONSET.2011.6167983
Filename
6167983
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