Sub 0.1 /spl mu/m SOI MOSFETs with counter doping into uniformly and heavily doped channel region

We proposed counter doping into a heavily and uniformly doped channel region of SOI MOSFETs. This enabled us to suppress the short channel effects with proper threshold voltage V/sub th/, and to eliminate parasitic edge or back gate transistors. We derived a model for V/sub th/, as a function of the projected range, R/sub p/ and dose, /spl Phi//sub D/, of the counter doping and showed that V/sub th/ is invariable even when the as-implanted counter doping profile redistributes. Using this technology, we demonstrated a V/sub th/ roll-off free 0.075 /spl mu/m-L/sub Geff/ nMOSFET with low off-state current.