Title :
Site-controlled single photon emitters based on InGaN/GaN quantum dots
Author :
Zhang, Lei ; Hill, Tyler ; Deng, Hui ; Lee, Leung-Kway ; Teng, Chu-Hsiang ; Ku, Pei-Cheng
Author_Institution :
Dept. of Phys., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Site-controlled single photon emitters with emission wavelengths matched to the peak efficiency of silicon single photon detectors were demonstrated using lithographically defined InGaN/GaN quantum dots. A drastic strain-relaxation-induced enhancement of radiative efficiency was observed.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoemission; photolithography; photoluminescence; semiconductor quantum dots; wide band gap semiconductors; InGaN-GaN; emission wavelengths; lithography; quantum dots; radiative efficiency; site-controlled single photon emitters; strain-relaxation-induced enhancement; Gallium nitride; Green products; Laser excitation; Photonics; Quantum dots; Strain; System-on-a-chip;
Conference_Titel :
Optical MEMS and Nanophotonics (OMN), 2012 International Conference on
Conference_Location :
Banff, AB
Print_ISBN :
978-1-4577-1511-2
DOI :
10.1109/OMEMS.2012.6318886
