Silicon MOSFETs with very low microwave noise

Author

De La Houssaye, P.R. ; Chang, C.E. ; Offord, B. ; Johnson, R. ; Asbeck, P.M. ; Garcia, G.A. ; Lagnado, I.

Author_Institution

Res., Dev., Test & Evaluation Div., Naval Command, Control & Ocean Surveillance Centre, San Diego, CA, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

18

Lastpage

19

Abstract

Reports MOSFETs with noise figures as low as 0.9 dB at 2 GHz, the lowest achieved to date with Si FETs. The devices were fabricated in thin-film silicon-on-sapphire, with gate lengths (defined by optical lithography) drawn at 0.5 /spl mu/m. The devices employed T-gate structures, with extra added aluminum to minimize gate resistance. The microwave gain was high: f/sub max/ values were as high as 52 GHz (near record performance) for nMOS and 32 GHz far pMOS transistors; f/sub t/ values were 17 GHz and 13 GHz for nMOS and pMOS respectively.

Keywords

MOSFET; elemental semiconductors; microwave field effect transistors; photolithography; semiconductor device noise; semiconductor thin films; silicon; 0.5 micron; 0.9 dB; 13 GHz; 17 GHz; 2 GHz; 32 GHz; 52 GHz; MOSFETs; Si; T-gate structures; f/sub max/ values; f/sub t/ values; gate lengths; gate resistance; microwave gain; microwave noise; noise figures; optical lithography; thin-film silicon-on-sapphire; FETs; MOS devices; MOSFETs; Microwave devices; Noise figure; Optical films; Optical noise; Semiconductor thin films; Silicon; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496231

Filename

496231