Title :
Strong holographic gratings written in semiconducting CdF/sub 2/:Ga
Author :
Ryskin, A.I. ; Shcheulin, A.S. ; Redmond, I. ; Linke
Author_Institution :
Vavilov (S.I.) State Opt. Inst., St. Petersburg, Russia
Abstract :
Summary form only given. We report measurements on a new member of the DX family, CdF/sub 2/ doped with Ga, which exhibits the advantages of the DX materials and offers the highest long-term holographic grating storage temperature (200 K) thus far for crystals in this class. Refractive index gratings observed in GaAlAs:DX and CdZnTe:DX result from a localized modification of the free-carrier concentration brought about by an optically induce release of electrons from the deep DX state.
Keywords :
cadmium compounds; gallium; holographic gratings; holographic storage; refractive index; 200 K; CdF/sub 2/:Ga; CdZnTe:DX; DX family; DX materials; GaAlAs:DX; deep DX state; electron release; free-carrier concentration; localized modification; long-term holographic grating storage temperature; optically induce; refractive index gratings; semiconducting CdF/sub 2/:Ga; strong holographic gratings; Crystalline materials; Crystals; Gratings; Holography; Material storage; Optical materials; Refractive index; Semiconductivity; Semiconductor materials; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676071
