DocumentCode
3535016
Title
Very low noise characteristics of AlGaAs/InGaAs HEMTs with wide head T-gate
Author
Jin-Hee Lee ; Hyung-Sup Yoon ; Chul-Soon Park ; Hyung-Moo Park
Author_Institution
Semicond. Div., Electron. & Telecommun. Res. Inst., Taejeon, South Korea
fYear
1995
fDate
19-21 June 1995
Firstpage
36
Lastpage
37
Abstract
The parasitic gate resistance is one of the most important factors in determining the noise performance of HEMTs. In order to reduce the gate resistance, T-shaped gates with large cross-sectional area are required. In this study, we report a AlGaAs/InGaAs pseudomorphic HEMT with a newly developed wide head T-gate fabricated by using dose split electron beam lithography and selective gate recess etching.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; AlGaAs-InGaAs; dose split electron beam lithography; fabrication; noise; parasitic gate resistance; pseudomorphic HEMT; selective gate recess etching; wide head T-gate; Frequency; HEMTs; Indium gallium arsenide; Intrusion detection; MODFETs; Noise figure; Noise measurement; PHEMTs; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location
Charlottesville, VA, USA
Print_ISBN
0-7803-2788-8
Type
conf
DOI
10.1109/DRC.1995.496239
Filename
496239
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