Monolithic integration of a 94 GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off

Author

Basco, R. ; Prabhu, A. ; Yngvesson, S. ; Kei May Lau

Author_Institution

Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

38

Lastpage

39

Abstract

We report the integration of an AlGaAs/GaAs two dimensional electron gas (2DEG) bolometric mixer and a quartz based microstrip circuit using the epitaxial lift-off (ELO) technique. The predicted potential performance of the 2DEG mixer at about 1 THz is T/sub M,DSB//spl ap/2,000K, which is competitive with the best data for Schottky diode mixers. The 2DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. The active area dimensions are large (tens of pm) and uncritical, while integrated Schottky fabrication requires much more stringent consideration of size and parasitic effects.

Keywords

III-V semiconductors; aluminium compounds; bolometers; gallium arsenide; millimetre wave mixers; quartz; semiconductor epitaxial layers; semiconductor technology; two-dimensional electron gas; 94 GHz; AlGaAs-GaAs; SiO/sub 2/; epitaxial lift-off; fabrication; microstrip circuit; monolithic integration; quartz substrate; two dimensional electron gas bolometric mixer; Fabrication; Gallium arsenide; Local oscillators; Loss measurement; Microstrip; Millimeter wave measurements; Monolithic integrated circuits; Power measurement; Radio frequency; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496240

Filename

496240