Title :
Monolithic integration of a 94 GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off
Author :
Basco, R. ; Prabhu, A. ; Yngvesson, S. ; Kei May Lau
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Abstract :
We report the integration of an AlGaAs/GaAs two dimensional electron gas (2DEG) bolometric mixer and a quartz based microstrip circuit using the epitaxial lift-off (ELO) technique. The predicted potential performance of the 2DEG mixer at about 1 THz is T/sub M,DSB//spl ap/2,000K, which is competitive with the best data for Schottky diode mixers. The 2DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. The active area dimensions are large (tens of pm) and uncritical, while integrated Schottky fabrication requires much more stringent consideration of size and parasitic effects.
Keywords :
III-V semiconductors; aluminium compounds; bolometers; gallium arsenide; millimetre wave mixers; quartz; semiconductor epitaxial layers; semiconductor technology; two-dimensional electron gas; 94 GHz; AlGaAs-GaAs; SiO/sub 2/; epitaxial lift-off; fabrication; microstrip circuit; monolithic integration; quartz substrate; two dimensional electron gas bolometric mixer; Fabrication; Gallium arsenide; Local oscillators; Loss measurement; Microstrip; Millimeter wave measurements; Monolithic integrated circuits; Power measurement; Radio frequency; Substrates;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496240
