DocumentCode :
3535121
Title :
Nano electronic modelling (NEMO)
Author :
Klimeck, G. ; Lake, R. ; Bowen, R.C. ; Frensley, W.R. ; Blanks, D.
Author_Institution :
Erik Jonsson Sch. of Electr. Eng. & Comput. Sci., Texas Univ., Dallas, TX, USA
fYear :
1995
fDate :
19-21 June 1995
Firstpage :
52
Lastpage :
53
Abstract :
The design of resonant tunneling based quantum devices requires accurate modeling of the quantum charge, resonant levels, and scattering effects in extremely complicated and varied potential profiles made possible by the great flexibility of heteroepitaxial based band engineering. Until now, such a device simulator did not exist. We unveil an alpha version of such a tool. It is planned for this tool to become available to the national R&D community. The tool solves the non-equilibrium Green function equations including realistic models for the important scattering mechanisms.
Keywords :
Green´s function methods; nanotechnology; quantum interference devices; resonant tunnelling diodes; semiconductor device models; NEMO; heteroepitaxial based band engineering; nanoelectronic modelling; nonequilibrium Green function equations; potential profiles; quantum charge; resonant levels; resonant tunneling based quantum devices; scattering effects; Acoustic scattering; Boundary conditions; Optical scattering; Particle scattering; Phonons; Quantum computing; Research and development; Resonance; Resonant tunneling devices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
Type :
conf
DOI :
10.1109/DRC.1995.496267
Filename :
496267
Link To Document :
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