Title :
Multiparameter OFET sensor at low power
Author :
Das, A. ; Tyagi, A.K. ; Grell, M. ; Richardson, T.H. ; Turner, M.L.
Author_Institution :
Surface & Nanosci. Div., Indira Gandhi Centre for Atomic Res., Kalpakkam, India
Abstract :
Sensitive, reproducible multi-parameter sensor properties are demonstrated by using an amorphous organic semiconductor as an active layer of the field effect transistor. Anodized aluminium as a nano gate insulator allowed low power OFET fabrication. Utility of such device over the chemiresistor is described. A highly sensitive NO2 sensor that shows selectivity over a range of analytes e.g. alcohols, acetone and toxic vapour (DMMP) is discussed.
Keywords :
chemical sensors; low-power electronics; nitrogen compounds; organic field effect transistors; NO2; acetone vapour; amorphous organic semiconductor; anodized aluminium; low power OFET fabrication; multiparameter OFET sensor; multiparameter sensor properties; nanogate insulator; toxic vapour; Gate insulator; Organic Transistor; Sensor;
Conference_Titel :
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-0071-1
DOI :
10.1109/ICONSET.2011.6168013
