• DocumentCode
    3535182
  • Title

    High-performance resonant-cavity photodetectors

  • Author

    Anselm, K.A. ; Murtaza, S.S. ; Tan, I.-H. ; Chelakara, R.V. ; Islam, M.R. ; Dupuis, R.D. ; Streetman, B.G. ; Bowers, J.E. ; Hu, E.L. ; Campbell, J.C.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    1995
  • fDate
    19-21 June 1995
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    Resonant-cavity photodetectors (RECAPs) can circumvent the tradeoff between quantum efficiency and bandwidth that can limit the performance of conventional photodiode structures. For example, a Si-based RECAP has achieved 65% external quantum efficiency with almost 10x improvement in bandwidth compared to commercially-available Si p-i-n photodiodes. In addition, the wavelength selective spectral response offers potential advantages for applications where filtering is needed such as wavelength division multiplexing (WDM). In this paper, we demonstrate, for the first time, a resonant-cavity, separate absorption and multiplication (SAM) avalanche photodiode (APD). The motivation for using the SAM-APD structure is to achieve single carrier injection into the multiplication region and thus obtain low excess multiplication noise. We also demonstrate a long-wavelength, resonant-cavity photodetector that exhibits a high quantum efficiency and the narrowest spectral-linewidth reported to date.
  • Keywords
    avalanche photodiodes; photodetectors; semiconductor device noise; semiconductor quantum wells; wavelength division multiplexing; RECAPs; avalanche photodiode; bandwidth; excess multiplication noise; multiplication region; quantum efficiency; resonant-cavity photodetectors; separate absorption and multiplication; single carrier injection; wavelength division multiplexing; wavelength selective spectral response; Absorption; Bandwidth; Dark current; Electrons; Filtering; Ionization; PIN photodiodes; Photodetectors; Resonance; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1995. Digest. 1995 53rd Annual
  • Conference_Location
    Charlottesville, VA, USA
  • Print_ISBN
    0-7803-2788-8
  • Type

    conf

  • DOI
    10.1109/DRC.1995.496272
  • Filename
    496272