GaAs/AlGaAs electrooptic modulator with novel electrodes and bandwidth in excess of 40 GHz

Author

Spickermann, R. ; Sakamoto, S. ; Peters, M. ; Dagli, N.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

72

Lastpage

73

Abstract

This abstract reports the latest results of our ongoing effort on GaAs/AlGaAs traveling wave Mach-Zehnder electrooptic modulators. Previously we reported >40 GHz electrical bandwidths but with rather large on/off voltage V/sub /spl pi//. By introducing a completely different electrode design we have reduced the V/sub /spl pi// from 28 V to 10 V while keeping the measured bandwidth >40 GHz. Furthermore the new design reduces the microwave loss, which determines the bandwidth, from 4.6 to 3.2 dB/cm at 35 GHz. Additionally, this new electrode geometry has the potential for further V/sub /spl pi// reduction while maintaining low loss.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; electrodes; gallium arsenide; 10 V; 35 GHz; 40 GHz; GaAs-AlGaAs; electrical bandwidth; electrode design; microwave loss; traveling wave Mach-Zehnder electrooptic modulator; Bandwidth; Electrodes; Electrooptic modulators; Gallium arsenide; High speed optical techniques; Microwave devices; Optical interferometry; Optical losses; Optical modulation; Optical waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496276

Filename

496276