DocumentCode :
3535234
Title :
Non-pixelated quantum well diode diffraction modulators
Author :
Lahiri, I. ; Melloch, M.R. ; Nolte, D.D.
Author_Institution :
Dept. of Phys., Purdue Univ., West Lafayette, IN, USA
fYear :
1995
fDate :
19-21 June 1995
Firstpage :
74
Lastpage :
75
Abstract :
Electroabsorption modulators are typically reticulated into NxN pixel arrays with N/sup 2/ electrical leads. Extension to broad-area arrays becomes technically and economically prohibitive. We show that the multiple contacts can be replaced by two electrodes and dynamic holography by operating multiple-quantum-well (MQW) diodes as holographic thin films with no photolithographic reticulation necessary. The key to this performance is the recent discovery of sharp excitons in low-temperature-growth (LTG) MQWs. The LTG layers isolate adjacent pixels, thus eliminating the need for elaborate post-growth photolithography.
Keywords :
electro-optical modulation; holographic optical elements; light diffraction; semiconductor quantum wells; broad-area arrays; dynamic holography; electroabsorption modulators; electrodes; excitons; holographic thin films; low-temperature-growth MQWs; multiple-quantum-well diodes; nonpixelated diffraction modulators; Diffraction; Diodes; Holographic optical components; Holography; Nonlinear optics; Optical buffering; Optical films; Optical mixing; Optical modulation; Quantum well devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
Type :
conf
DOI :
10.1109/DRC.1995.496277
Filename :
496277
Link To Document :
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