Title :
A new concept of enhanced-mode GaN HEMT using fluorine implantation in the GaN layer
Author :
Hamady, Saleem ; Morancho, Frederic ; Beydoun, Bilal ; Austin, Patrick ; Gavelle, Mathieu
Author_Institution :
LAAS, Toulouse, France
Abstract :
In this paper, a new concept of normally-off HEMT is proposed: it uses for the first time the implantation of Fluorine ions in the GaN layer below the AlGaN/GaN interface rather than in the AlGaN layer. Simulation results show that the proposed method is more effective when it comes to the Fluorine concentration required to achieve normally-off operation.
Keywords :
III-V semiconductors; aluminium compounds; fluorine; gallium compounds; ion implantation; power HEMT; semiconductor doping; wide band gap semiconductors; AlGaN-GaN; GaN:F; enhanced-mode GaN HEMT; fluorine concentration; fluorine ion implantation; high electron mobility transistor; normally-off HEMT; Aluminum gallium nitride; Gallium nitride; HEMTs; Ions; Logic gates; MODFETs; Threshold voltage; Device simulation; Gallium Nitride (GaN); High electron mobility transistor (HEMT); Wide bandgap devices;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6631904
