Title :
Robustness requirements on semiconductors for high power applications
Author :
Nagel, Andreas ; Bakran, Mark M.
Author_Institution :
Siemens AG, Nurnberg, Germany
Abstract :
Robustness of power semiconductors is a key parameter for reliable converter operation. This paper discusses the main robustness characteristics limiting the performance in high power converters. It shows necessary design precautions for the circuit design and also explains where the semiconductor manufacturer has to improve the devices with the aim of maximum electrical exploitation of the semiconductor.
Keywords :
insulated gate bipolar transistors; power convertors; semiconductor device reliability; IGBT; circuit design; high power converters; power semiconductors robustness; semiconductor maximum electrical exploitation; Circuit stability; Insulated gate bipolar transistors; Logic gates; Robustness; Semiconductor diodes; Switches; Thermal stability; Device application; IGBT; Robustness; Traction application;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6631910
