4H-SiC MESFET´s on high resistivity substrates with 30 GHz f/sub max/

Author

Allen, S.T. ; Palmour, J.W. ; Tsvetkov, V.F. ; Macko, S.J. ; Carter, C.H., Jr. ; Weitzel, C.E. ; Moore, K.E. ; Nordquist, K.J. ; Pond, L.L., III

Author_Institution

Cree Res. Inc., Durham, NC, USA

fYear

1995

fDate

19-21 June 1995

Firstpage

102

Lastpage

103

Abstract

MESFET´s fabricated on high resistivity 4H-SiC substrates have attained an f/sub max/ of 30.5 GHz and an f/sub /spl tau// of 14.0 GHz. Both of these figures of merit are the highest ever reported for a SiC MESFET, and this is the first report of high resistivity 4H-SiC substrates. With the continued advances in bulk crystal growth, including the availability of high resistivity material, the development of two-inch substrates and the reduction of micropipe defect densities to <30 cm/sup -2/, SiC is rapidly emerging as a viable technology for high power microwave applications.

Keywords

microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; silicon compounds; substrates; wide band gap semiconductors; 14 GHz; 30 GHz; 4H-SiC MESFET; SHF; SiC; high power microwave applications; high resistivity substrates; micropipe defect density reduction; Conductivity; Doping; MESFETs; Microwave devices; Microwave measurements; Neodymium; Power transmission lines; Silicon carbide; Substrates; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1995. Digest. 1995 53rd Annual

Conference_Location

Charlottesville, VA, USA

Print_ISBN

0-7803-2788-8

Type

conf

DOI

10.1109/DRC.1995.496289

Filename

496289