Title :
The effect of pH on synthesis of ZnO nanostructure and its potential application in gas sensor
Author :
Kamruddin, M. ; Kamalakannan, R. ; Dhara, S. ; Tyagi, A.K. ; Saranya, P.
Author_Institution :
Dept. of Nanotechnol., Indira Gandhi Centre for Atomic Res., Kalpakkam, India
Abstract :
ZnO is a unique wide band gap semiconducting material with immense potential to grow in a variety of nanostructures depending on the growth condition. In facile synthesis of ZnO, just by changing the solution pH, nano- platelets and nano-flower like structures are grown. The morphologies of the final products and its phase purity are confirmed by HRSEM, XRD and Raman. The room-temperature photoluminescence spectra of the nanostructures reveal strong emission lines at 401 and 404 nm, corresponding to defect-related emission. To show the potential of these nanostructures for gas sensing applications, the response of flower like nanostructure to NH3 gas at 250 °C have been investigated. The sensor shows n- type response to ppm level ammonia gas.
Keywords :
II-VI semiconductors; Raman spectra; X-ray diffraction; ammonia; gas sensors; nanofabrication; nanosensors; nanostructured materials; pH; photoluminescence; scanning electron microscopy; semiconductor growth; wide band gap semiconductors; zinc compounds; HRSEM; NH3; Raman spectra; XRD; ZnO; defect-related emission; emission lines; gas sensor; nanoflower-like structures; nanoplatelet-like structure; nanostructured materials; pH effect; phase purity; ppm level ammonia gas; room temperature photoluminescence spectra; temperature 250 degC; temperature 293 K to 298 K; wavelength 401 nm; wavelength 404 nm; wide band gap semiconducting material; Integrated circuits; Nitrogen; X-ray scattering; Zinc oxide; Gas sensor; Nanostructure; ZnO;
Conference_Titel :
Nanoscience, Engineering and Technology (ICONSET), 2011 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4673-0071-1
DOI :
10.1109/ICONSET.2011.6168030
