Title :
Investigation of GaAs/AlGaAs multiquantum well infrared detector
Author :
Jin-Min Li ; Hai-Qun Zheng ; Yi-Ping Zeng ; Mei-Ying Kong
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
In this article, we present the experimental results of a 130 unit GaAs/AlGaAs quantum well infrared detector line-array with front-side normal illumination based on a waveguide of a doubly periodic grating coupler. The detector array has achieved a broad spectral response by optimizing the quantum well structures and device processes.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor quantum wells; GaAs-AlGaAs; doubly periodic grating coupler; front-side normal illumination; intersubband transitions; line array; multiquantum well infrared detector; spectral response; waveguide; Absorption; Arrayed waveguide gratings; Etching; Gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Photoconductivity; Quantum well devices; Sensor arrays; Substrates;
Conference_Titel :
Device Research Conference, 1995. Digest. 1995 53rd Annual
Conference_Location :
Charlottesville, VA, USA
Print_ISBN :
0-7803-2788-8
DOI :
10.1109/DRC.1995.496297
