Tunable wideband microwave band-stop and band-pass filters YIG/GGG-GaAs layer structures

Author

Tsai, C.S. ; Qiu, G. ; Gao, H. ; Yang, L.W. ; Li, G.P. ; Nikitov, S.A.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Irvine, CA, USA

fYear

2005

fDate

4-8 April 2005

Firstpage

1115

Lastpage

1116

Abstract

Wideband communication and radar systems require high-speed electronically tuned wideband microwave band-stop and band-pass filters. Ferromagnetic resonance (FMR)-based microwave devices possess the unique capability of high-speed electronic tunability, using magnetic field, for very high carrier frequency and very large bandwidth. In this paper, low-loss magnetically tuned wideband microwave band-stop and band-pass fillers using yttrium iron garnet/gadolinium gallium garnet-gallium arsenide (YIG/GGG-GaAs) layer structures are reported. Modeling arid simulation has been carried out for both types of filters using the lumped-element equivalent circuit model.

Keywords

band-pass filters; band-stop filters; broadband networks; equivalent circuits; ferromagnetic resonance; gallium arsenide; magnetic fields; microwave filters; FMR-based microwave devices; band-pass filters; ferromagnetic resonance; high-speed electronic tunability; lumped-element equivalent circuit model; magnetic field; radar systems; tunable wideband microwave band-stop filters; wideband communication; Band pass filters; High-speed electronics; Magnetic fields; Magnetic resonance; Magnetic separation; Microwave communication; Microwave devices; Radar; Tunable circuits and devices; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463987

Filename

1463987